MOSFET level 4 (BSIM1)

Instance line: Mname …
Model line: .model mname nmos | pmos, LEVEL=4
Terminals: Drain, Gate, Source, Bulk
Described in: MOSFETs
Source: src/lib/dev/bsim1/b1.c

Instance parameters (13)

Input and output (12)

name	type	description
`l`	real	Length
`w`	real	Width
`ad`	real	Drain area
`as`	real	Source area
`pd`	real	Drain perimeter
`ps`	real	Source perimeter
`nrd`	real	Number of squares in drain
`nrs`	real	Number of squares in source
`off`	flag	Device is initially off
`vds`	real	Initial D-S voltage
`vgs`	real	Initial G-S voltage
`vbs`	real	Initial B-S voltage

Input only (1)

name	type	description	notes
`ic`	vector	Vector of DS,GS,BS initial voltages

Model parameters (79)

Input and output (77)

name	type	description	notes
`vfb`	real	Flat band voltage
`lvfb`	real	Length dependence of vfb
`wvfb`	real	Width dependence of vfb
`phi`	real	Strong inversion surface potential
`lphi`	real	Length dependence of phi
`wphi`	real	Width dependence of phi
`k1`	real	Bulk effect coefficient 1
`lk1`	real	Length dependence of k1
`wk1`	real	Width dependence of k1
`k2`	real	Bulk effect coefficient 2
`lk2`	real	Length dependence of k2
`wk2`	real	Width dependence of k2
`eta`	real	VDS dependence of threshold voltage
`leta`	real	Length dependence of eta
`weta`	real	Width dependence of eta
`x2e`	real	VBS dependence of eta
`lx2e`	real	Length dependence of x2e
`wx2e`	real	Width dependence of x2e
`x3e`	real	VDS dependence of eta
`lx3e`	real	Length dependence of x3e
`wx3e`	real	Width dependence of x3e
`dl`	real	Channel length reduction in um
`dw`	real	Channel width reduction in um
`muz`	real	Zero field mobility at VDS=0 VGS=VTH
`x2mz`	real	VBS dependence of muz
`lx2mz`	real	Length dependence of x2mz
`wx2mz`	real	Width dependence of x2mz
`mus`	real	Mobility at VDS=VDD VGS=VTH, channel length modulation
`lmus`	real	Length dependence of mus
`wmus`	real	Width dependence of mus
`x2ms`	real	VBS dependence of mus
`lx2ms`	real	Length dependence of x2ms
`wx2ms`	real	Width dependence of x2ms
`x3ms`	real	VDS dependence of mus
`lx3ms`	real	Length dependence of x3ms
`wx3ms`	real	Width dependence of x3ms
`u0`	real	VGS dependence of mobility
`lu0`	real	Length dependence of u0
`wu0`	real	Width dependence of u0
`x2u0`	real	VBS dependence of u0
`lx2u0`	real	Length dependence of x2u0
`wx2u0`	real	Width dependence of x2u0
`u1`	real	VDS depence of mobility, velocity saturation
`lu1`	real	Length dependence of u1
`wu1`	real	Width dependence of u1
`x2u1`	real	VBS depence of u1
`lx2u1`	real	Length depence of x2u1
`wx2u1`	real	Width depence of x2u1
`x3u1`	real	VDS depence of u1
`lx3u1`	real	Length dependence of x3u1
`wx3u1`	real	Width depence of x3u1
`n0`	real	Subthreshold slope
`ln0`	real	Length dependence of n0
`wn0`	real	Width dependence of n0
`nb`	real	VBS dependence of subthreshold slope
`lnb`	real	Length dependence of nb
`wnb`	real	Width dependence of nb
`nd`	real	VDS dependence of subthreshold slope
`lnd`	real	Length dependence of nd
`wnd`	real	Width dependence of nd
`tox`	real	Gate oxide thickness in um
`temp`	real	Temperature in degree Celcius
`vdd`	real	Supply voltage to specify mus
`cgso`	real	Gate source overlap capacitance per unit channel width(m)	ac
`cgdo`	real	Gate drain overlap capacitance per unit channel width(m)	ac
`cgbo`	real	Gate bulk overlap capacitance per unit channel length(m)	ac
`xpart`	real	Flag for channel charge partitioning
`rsh`	real	Source drain diffusion sheet resistance in ohm per square
`js`	real	Source drain junction saturation current per unit area
`pb`	real	Source drain junction built in potential
`mj`	real	Source drain bottom junction capacitance grading coefficient	ac
`pbsw`	real	Source drain side junction capacitance built in potential	ac
`mjsw`	real	Source drain side junction capacitance grading coefficient	ac
`cj`	real	Source drain bottom junction capacitance per unit area	ac
`cjsw`	real	Source drain side junction capacitance per unit area	ac
`wdf`	real	Default width of source drain diffusion in um
`dell`	real	Length reduction of source drain diffusion

Input only (2)

name	type	description	notes
`nmos`	flag	Flag to indicate NMOS
`pmos`	flag	Flag to indicate PMOS

Parameters are set on the instance or .model line as keyword=value, and read back with @name[keyword] or the show and showmod commands. See the device reference.