Spice3f5

MOSFET level 5 (BSIM2)

Instance line
Mname …
Model line
.model mname nmos | pmos, LEVEL=5
Terminals
Drain, Gate, Source, Bulk
Described in
MOSFETs
Source
src/lib/dev/bsim2/b2.c

Instance parameters (13)

Input and output (12)

nametypedescriptionnotes
lrealLength
wrealWidth
adrealDrain area
asrealSource area
pdrealDrain perimeter
psrealSource perimeter
nrdrealNumber of squares in drain
nrsrealNumber of squares in source
offflagDevice is initially off
vdsrealInitial D-S voltage
vgsrealInitial G-S voltage
vbsrealInitial B-S voltage

Input only (1)

nametypedescriptionnotes
icvectorVector of DS,GS,BS initial voltages

Model parameters (135)

Input and output (133)

nametypedescriptionnotes
vfbrealFlat band voltage
lvfbrealLength dependence of vfb
wvfbrealWidth dependence of vfb
phirealStrong inversion surface potential
lphirealLength dependence of phi
wphirealWidth dependence of phi
k1realBulk effect coefficient 1
lk1realLength dependence of k1
wk1realWidth dependence of k1
k2realBulk effect coefficient 2
lk2realLength dependence of k2
wk2realWidth dependence of k2
eta0realVDS dependence of threshold voltage at VDD=0
leta0realLength dependence of eta0
weta0realWidth dependence of eta0
etabrealVBS dependence of eta
letabrealLength dependence of etab
wetabrealWidth dependence of etab
dlrealChannel length reduction in um
dwrealChannel width reduction in um
mu0realLow-field mobility, at VDS=0 VGS=VTH
mu0brealVBS dependence of low-field mobility
lmu0brealLength dependence of mu0b
wmu0brealWidth dependence of mu0b
mus0realMobility at VDS=VDD VGS=VTH
lmus0realLength dependence of mus0
wmus0realWidth dependence of mus
musbrealVBS dependence of mus
lmusbrealLength dependence of musb
wmusbrealWidth dependence of musb
mu20realVDS dependence of mu in tanh term
lmu20realLength dependence of mu20
wmu20realWidth dependence of mu20
mu2brealVBS dependence of mu2
lmu2brealLength dependence of mu2b
wmu2brealWidth dependence of mu2b
mu2grealVGS dependence of mu2
lmu2grealLength dependence of mu2g
wmu2grealWidth dependence of mu2g
mu30realVDS dependence of mu in linear term
lmu30realLength dependence of mu30
wmu30realWidth dependence of mu30
mu3brealVBS dependence of mu3
lmu3brealLength dependence of mu3b
wmu3brealWidth dependence of mu3b
mu3grealVGS dependence of mu3
lmu3grealLength dependence of mu3g
wmu3grealWidth dependence of mu3g
mu40realVDS dependence of mu in linear term
lmu40realLength dependence of mu40
wmu40realWidth dependence of mu40
mu4brealVBS dependence of mu4
lmu4brealLength dependence of mu4b
wmu4brealWidth dependence of mu4b
mu4grealVGS dependence of mu4
lmu4grealLength dependence of mu4g
wmu4grealWidth dependence of mu4g
ua0realLinear VGS dependence of mobility
lua0realLength dependence of ua0
wua0realWidth dependence of ua0
uabrealVBS dependence of ua
luabrealLength dependence of uab
wuabrealWidth dependence of uab
ub0realQuadratic VGS dependence of mobility
lub0realLength dependence of ub0
wub0realWidth dependence of ub0
ubbrealVBS dependence of ub
lubbrealLength dependence of ubb
wubbrealWidth dependence of ubb
u10realVDS depence of mobility
lu10realLength dependence of u10
wu10realWidth dependence of u10
u1brealVBS depence of u1
lu1brealLength depence of u1b
wu1brealWidth depence of u1b
u1drealVDS depence of u1
lu1drealLength depence of u1d
wu1drealWidth depence of u1d
n0realSubthreshold slope at VDS=0 VBS=0
ln0realLength dependence of n0
wn0realWidth dependence of n0
nbrealVBS dependence of n
lnbrealLength dependence of nb
wnbrealWidth dependence of nb
ndrealVDS dependence of n
lndrealLength dependence of nd
wndrealWidth dependence of nd
vof0realThreshold voltage offset AT VDS=0 VBS=0
lvof0realLength dependence of vof0
wvof0realWidth dependence of vof0
vofbrealVBS dependence of vof
lvofbrealLength dependence of vofb
wvofbrealWidth dependence of vofb
vofdrealVDS dependence of vof
lvofdrealLength dependence of vofd
wvofdrealWidth dependence of vofd
ai0realPre-factor of hot-electron effect.
lai0realLength dependence of ai0
wai0realWidth dependence of ai0
aibrealVBS dependence of ai
laibrealLength dependence of aib
waibrealWidth dependence of aib
bi0realExponential factor of hot-electron effect.
lbi0realLength dependence of bi0
wbi0realWidth dependence of bi0
bibrealVBS dependence of bi
lbibrealLength dependence of bib
wbibrealWidth dependence of bib
vghighrealUpper bound of the cubic spline function.
lvghighrealLength dependence of vghigh
wvghighrealWidth dependence of vghigh
vglowrealLower bound of the cubic spline function.
lvglowrealLength dependence of vglow
wvglowrealWidth dependence of vglow
toxrealGate oxide thickness in um
temprealTemperature in degree Celcius
vddrealMaximum Vds
vggrealMaximum Vgs
vbbrealMaximum Vbs
cgsorealGate source overlap capacitance per unit channel width(m)ac
cgdorealGate drain overlap capacitance per unit channel width(m)ac
cgborealGate bulk overlap capacitance per unit channel length(m)ac
xpartrealFlag for channel charge partitioning
rshrealSource drain diffusion sheet resistance in ohm per square
jsrealSource drain junction saturation current per unit area
pbrealSource drain junction built in potential
mjrealSource drain bottom junction capacitance grading coefficientac
pbswrealSource drain side junction capacitance built in potentialac
mjswrealSource drain side junction capacitance grading coefficientac
cjrealSource drain bottom junction capacitance per unit areaac
cjswrealSource drain side junction capacitance per unit areaac
wdfrealDefault width of source drain diffusion in um
dellrealLength reduction of source drain diffusion

Input only (2)

nametypedescriptionnotes
nmosflagFlag to indicate NMOS
pmosflagFlag to indicate PMOS

Parameters are set on the instance or .model line as keyword=value, and read back with @name[keyword] or the show and showmod commands. See the device reference.