MOSFET level 1 (Shichman-Hodges)

Instance line: Mname …
Model line: .model mname nmos | pmos, LEVEL=1
Terminals: Drain, Gate, Source, Bulk
Described in: MOSFETs
Source: src/lib/dev/mos1/mos1.c

Instance parameters (77)

Input and output (12)

name	type	description	notes
`l`	real	Length	listed by show only when all parameters are asked for
`w`	real	Width	listed by show only when all parameters are asked for
`ad`	real	Drain area	listed by show only when all parameters are asked for
`as`	real	Source area	listed by show only when all parameters are asked for
`pd`	real	Drain perimeter	listed by show only when all parameters are asked for
`ps`	real	Source perimeter	listed by show only when all parameters are asked for
`nrd`	real	Drain squares	listed by show only when all parameters are asked for
`nrs`	real	Source squares	listed by show only when all parameters are asked for
`icvds`	real	Initial D-S voltage	listed by show only when all parameters are asked for
`icvgs`	real	Initial G-S voltage	listed by show only when all parameters are asked for
`icvbs`	real	Initial B-S voltage	listed by show only when all parameters are asked for
`temp`	real	Instance temperature	listed by show only when all parameters are asked for

Input only (4)

name	type	description
`off`	flag	Device initially off
`ic`	real vector	Vector of D-S, G-S, B-S voltages
`sens_l`	flag	flag to request sensitivity WRT length
`sens_w`	flag	flag to request sensitivity WRT width

Output only (61)

name	type	description	notes
`id`	real	Drain current
`is`	real	Source current
`ig`	real	Gate current
`ib`	real	Bulk current
`ibd`	real	B-D junction current	listed by show only when all parameters are asked for
`ibs`	real	B-S junction current	listed by show only when all parameters are asked for
`vgs`	real	Gate-Source voltage
`vds`	real	Drain-Source voltage
`vbs`	real	Bulk-Source voltage
`vbd`	real	Bulk-Drain voltage	listed by show only when all parameters are asked for
`dnode`	integer	Number of the drain node	listed by show only when all parameters are asked for
`gnode`	integer	Number of the gate node	listed by show only when all parameters are asked for
`snode`	integer	Number of the source node	listed by show only when all parameters are asked for
`bnode`	integer	Number of the node	listed by show only when all parameters are asked for
`dnodeprime`	integer	Number of int. drain node	listed by show only when all parameters are asked for
`snodeprime`	integer	Number of int. source node	listed by show only when all parameters are asked for
`von`	real
`vdsat`	real	Saturation drain voltage
`sourcevcrit`	real	Critical source voltage	listed by show only when all parameters are asked for
`drainvcrit`	real	Critical drain voltage	listed by show only when all parameters are asked for
`rs`	real	Source resistance
`sourceconductance`	real	Conductance of source	listed by show only when all parameters are asked for
`rd`	real	Drain conductance
`drainconductance`	real	Conductance of drain	listed by show only when all parameters are asked for
`gm`	real	Transconductance
`gds`	real	Drain-Source conductance
`gmb` (also `gmbs`)	real	Bulk-Source transconductance
`gbd`	real	Bulk-Drain conductance	listed by show only when all parameters are asked for
`gbs`	real	Bulk-Source conductance	listed by show only when all parameters are asked for
`cbd`	real	Bulk-Drain capacitance
`cbs`	real	Bulk-Source capacitance
`cgs`	real	Gate-Source capacitance
`cgd`	real	Gate-Drain capacitance
`cgb`	real	Gate-Bulk capacitance
`cqgs`	real	Capacitance due to gate-source charge storage	listed by show only when all parameters are asked for
`cqgd`	real	Capacitance due to gate-drain charge storage	listed by show only when all parameters are asked for
`cqgb`	real	Capacitance due to gate-bulk charge storage	listed by show only when all parameters are asked for
`cqbd`	real	Capacitance due to bulk-drain charge storage	listed by show only when all parameters are asked for
`cqbs`	real	Capacitance due to bulk-source charge storage	listed by show only when all parameters are asked for
`cbd0`	real	Zero-Bias B-D junction capacitance
`cbdsw0`	real
`cbs0`	real	Zero-Bias B-S junction capacitance
`cbssw0`	real
`qgs`	real	Gate-Source charge storage	listed by show only when all parameters are asked for
`qgd`	real	Gate-Drain charge storage	listed by show only when all parameters are asked for
`qgb`	real	Gate-Bulk charge storage	listed by show only when all parameters are asked for
`qbd`	real	Bulk-Drain charge storage	listed by show only when all parameters are asked for
`qbs`	real	Bulk-Source charge storage	listed by show only when all parameters are asked for
`p`	real	Instaneous power	listed by show only when all parameters are asked for
`sens_l_dc`	real	dc sensitivity wrt length	listed by show only when all parameters are asked for
`sens_l_real`	real	real part of ac sensitivity wrt length	listed by show only when all parameters are asked for
`sens_l_imag`	real	imag part of ac sensitivity wrt length	listed by show only when all parameters are asked for
`sens_l_mag`	real	sensitivity wrt l of ac magnitude	listed by show only when all parameters are asked for
`sens_l_ph`	real	sensitivity wrt l of ac phase	listed by show only when all parameters are asked for
`sens_l_cplx`	complex	ac sensitivity wrt length	listed by show only when all parameters are asked for
`sens_w_dc`	real	dc sensitivity wrt width	listed by show only when all parameters are asked for
`sens_w_real`	real	real part of ac sensitivity wrt width	listed by show only when all parameters are asked for
`sens_w_imag`	real	imag part of ac sensitivity wrt width	listed by show only when all parameters are asked for
`sens_w_mag`	real	sensitivity wrt w of ac magnitude	listed by show only when all parameters are asked for
`sens_w_ph`	real	sensitivity wrt w of ac phase	listed by show only when all parameters are asked for
`sens_w_cplx`	complex	ac sensitivity wrt width	listed by show only when all parameters are asked for

Model parameters (33)

Input and output (30)

name	type	description	notes
`vto` (also `vt0`)	real	Threshold voltage
`kp`	real	Transconductance parameter
`gamma`	real	Bulk threshold parameter
`phi`	real	Surface potential
`lambda`	real	Channel length modulation
`rd`	real	Drain ohmic resistance
`rs`	real	Source ohmic resistance
`cbd`	real	B-D junction capacitance	ac
`cbs`	real	B-S junction capacitance	ac
`is`	real	Bulk junction sat. current
`pb`	real	Bulk junction potential
`cgso`	real	Gate-source overlap cap.	ac
`cgdo`	real	Gate-drain overlap cap.	ac
`cgbo`	real	Gate-bulk overlap cap.	ac
`rsh`	real	Sheet resistance
`cj`	real	Bottom junction cap per area	ac
`mj`	real	Bottom grading coefficient
`cjsw`	real	Side junction cap per area	ac
`mjsw`	real	Side grading coefficient
`js`	real	Bulk jct. sat. current density
`tox`	real	Oxide thickness
`ld`	real	Lateral diffusion
`u0` (also `uo`)	real	Surface mobility
`fc`	real	Forward bias jct. fit parm.
`nsub`	real	Substrate doping
`tpg`	integer	Gate type
`nss`	real	Surface state density
`tnom`	real	Parameter measurement temperature
`kf`	real	Flicker noise coefficient
`af`	real	Flicker noise exponent

Input only (2)

name	type	description	notes
`nmos`	flag	N type MOSfet model
`pmos`	flag	P type MOSfet model

Output only (1)

name	type	description	notes
`type`	string	N-channel or P-channel MOS

Parameters are set on the instance or .model line as keyword=value, and read back with @name[keyword] or the show and showmod commands. See the device reference.